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Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

About The 3 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15.Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5

Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.3 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15.29mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

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Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF
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    • Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

    Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

    29mm, Maximum Operating Temperature: +175 °C.3 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15.

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    • Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

    Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

    29mm, Maximum Operating Temperature: +175 °C.3 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15.Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.

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