Onsemi P-Channel MOSFET, 4.4 A, 100 V, 8-Pin Power 33 FDMC86139P
About The onsemi P-Channel MOSFET, 4.4 A, 100 V, 8-Pin Power 33 FDMC86139P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 104 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 0
onsemi P-Channel MOSFET, 4.4 A, 100 V, 8-Pin Power 33 FDMC86139P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 104 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 0.725mm, Length: 3.3mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi P-Channel MOSFET, 4.4 A, 100 V, 8-Pin Power 33 FDMC86139P
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi P-Channel MOSFET, 4.4 A, 100 V, 8-Pin Power 33 FDMC86139P | |
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