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Onsemi Dual N/P-Channel-Channel MOSFET, 4.4 A, 6.2 A, 40 V, 8-Pin SOIC FDS4897C

About The 2 A, 40 V, 8-Pin SOIC FDS4897C, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 29 mΩ, 46 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.4 A, 6

onsemi Dual N/P-Channel-Channel MOSFET, 4.4 A, 6.2 A, 40 V, 8-Pin SOIC FDS4897C, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 29 mΩ, 46 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi Dual N/P-Channel-Channel MOSFET, 4.4 A, 6.2 A, 40 V, 8-Pin SOIC FDS4897C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi Dual N/P-Channel-Channel MOSFET, 4.4 A, 6.2 A, 40 V, 8-Pin SOIC FDS4897C

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Onsemi Dual N/P-Channel-Channel MOSFET, 4.4 A, 6.2 A, 40 V, 8-Pin SOIC FDS4897C
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