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Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1

About The Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 Ω, Maximum Gate Threshold Voltage: 3

Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 Ω, Maximum Gate Threshold Voltage: 3.5V, Series: 800V CoolMOS P7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1

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Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 IPN80R1K4P7ATMA1
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