IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 25 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Maximum Operating Temperature: +175 °C
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IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P
Specifications of IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P | |
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