Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin DPAK IRFS3306PBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 4.06mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin DPAK IRFS3306PBF
Specifications of Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin DPAK IRFS3306PBF | |
---|---|
Category | |
Instock | instock |
Last Updated