Infineon N-Channel MOSFET, 290 A, 100 V, 3-Pin TO-247AC IRFP4468PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15.87mm, Maximum Operating Temperature: +175 °C
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Infineon N-Channel MOSFET, 290 A, 100 V, 3-Pin TO-247AC IRFP4468PBF
Specifications of Infineon N-Channel MOSFET, 290 A, 100 V, 3-Pin TO-247AC IRFP4468PBF | |
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