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Microchip N-Channel MOSFET, 30 MA, 500 V Depletion, 3-Pin TO-92 LND150N3-G

About The Microchip N-Channel MOSFET, 30 mA, 500 V Depletion, 3-Pin TO-92 LND150N3-G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 kΩ, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 740 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5.2mm, Maximum Operating Temperature: +150 °C

Microchip N-Channel MOSFET, 30 mA, 500 V Depletion, 3-Pin TO-92 LND150N3-G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 kΩ, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 740 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5.2mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Microchip N-Channel MOSFET, 30 MA, 500 V Depletion, 3-Pin TO-92 LND150N3-G

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Microchip N-Channel MOSFET, 30 MA, 500 V Depletion, 3-Pin TO-92 LND150N3-G

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Microchip N-Channel MOSFET, 30 MA, 500 V Depletion, 3-Pin TO-92 LND150N3-G
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