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Onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H

About The onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H

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Onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H
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    onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTP067N65S3H

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