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Onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G

About The 04mm, Maximum Operating Temperature: +150 °C.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3

onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3.04mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G

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Onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
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