Vishay Dual N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.12 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: E Series, MPN: SIHB120N60E-T1-GE3
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Vishay Dual N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK
Specifications of Vishay Dual N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK | |
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