IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.41mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2
Specifications of IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2 | |
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