Onsemi P-Channel MOSFET, 950 MA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G

Sifam Tinsley Two-line Lcd Display Digital Panel Multi-Function Meter, 45mm x 92mm, Properties Measured: Capacity, Current, Energy, Power, Voltage, Depth: 93mm, Number of Digits: 1 Row 6-digits, 2 Rows 5-digits, MPN: N32H-110000000M0.

37 A, 20 V, 3-Pin SOT-323 NTS4101PG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 329 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 2.2mm, Maximum Operating Temperature: +150 °C, MPN: NTS4101PT1G.onsemi P-Channel MOSFET, 1.

5mm, Solder, Length: 15mm, Width: 8mm, Colour: Silver, MPN: FK 250 06 LF PAK.Fischer Elektronik Heatsink, 37K/W, 15 x 8 x 6.

Omron Plug In Power Relay, 12V dc Coil, 10A Switching Current, SPDT, Latching: No, MPN: G2R-1-SN DC12(S).

onsemi Dual N-Channel MOSFET, 280 mA, 20 V, 6-Pin SOT-963 ON Semiconductor NTUD3170NZT5G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.

CAE Groupe Coaxial Cable, 100m, KX8 Coaxial, Unterminated, Outer Diameter: 10.4, Maximum Operating Temperature: +70°C, MPN: KX810.

ROHM UDZUVFHTE-175.6B, Uni-Directional TVS Diode SOD-323FL, Diode Configuration: Single, Minimum Breakdown Voltage: 5.49V, Mounting Type: Surface Mount.

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 210 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 1.7mm, Maximum Operating Temperature: +150 °C.

49V, Mounting Type: Surface Mount.6B, Uni-Directional TVS Diode SOD-323FL, Diode Configuration: Single, Minimum Breakdown Voltage: 5.

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 210 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 1.7mm, Maximum Operating Temperature: +150 °C.