Infineon N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF
About The Infineon N-Channel MOSFET, 9.54mm, Maximum Operating Temperature: +175 °C
Infineon N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 82 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.54mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB IRF630NPBF | |
|---|---|
| Category | |
| Instock | instock |
Last Updated
Rating :- 9.67 /10
Votes :- 6
