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Infineon N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON BSZ060NE2LSATMA1

About The 1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.1mm

Infineon N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON BSZ060NE2LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 26 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON BSZ060NE2LSATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON BSZ060NE2LSATMA1

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Infineon N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON BSZ060NE2LSATMA1
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