Vishay Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET SI5935CDC-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 156 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 3.1 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.1mm, Length: 3.1mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET SI5935CDC-T1-GE3
Specifications of Vishay Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET SI5935CDC-T1-GE3 | |
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