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Infineon N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1

About The 7V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Length: 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1

Infineon N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Length: 2.9mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1

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Infineon N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1
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