Infineon N-Channel MOSFET, 34.6 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 313 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 34.6 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1
Specifications of Infineon N-Channel MOSFET, 34.6 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1 | |
---|---|
Category | |
Instock | instock |
Last Updated