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DiodesZetex Dual N-Channel MOSFET, 540 MA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

About The .DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 225 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 225 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3.1mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

DiodesZetex Dual N-Channel MOSFET, 540 MA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of DiodesZetex Dual N-Channel MOSFET, 540 MA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

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DiodesZetex Dual N-Channel MOSFET, 540 MA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7
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