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Vishay N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB SIHP6N40D-GE3

About The Vishay N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB SIHP6N40D-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.51mm, Maximum Operating Temperature: +150 °C

Vishay N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB SIHP6N40D-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.51mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB SIHP6N40D-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB SIHP6N40D-GE3

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Vishay N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB SIHP6N40D-GE3
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