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STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

About The STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12, Mounting Type: Through Hole, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.4mm, Maximum Operating Temperature: +175 °C

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12, Mounting Type: Through Hole, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.4mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12

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STMicroelectronics N-Channel MOSFET, 80 A, 120 V, 3-Pin TO-220 STP80NF12
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