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Vishay N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3

About The 7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.5V

Vishay N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0074 Ω, Maximum Gate Threshold Voltage: 2 → 3.5V

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Vishay N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3

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Vishay N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3
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    • Vishay N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3

    Vishay N-Channel MOSFET, 54.7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3

    5V.7 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS30ADN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0074 Ω, Maximum Gate Threshold Voltage: 2 → 3.Vishay N-Channel MOSFET, 54.

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