Onsemi P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 NTR4502PG
About The 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 2.9 A, 30 V, 3-Pin SOT-23 NTR4502PG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1
onsemi P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 NTR4502PG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 2.9mm, MPN: NTR4502PT1G
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 NTR4502PG
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 NTR4502PG | |
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