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IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

About The IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.96mm

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

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IXYS N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50
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