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Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin TO-220FP IRFI9610GPBF

About The Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin TO-220FP IRFI9610GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Maximum Operating Temperature: +150 °C

Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin TO-220FP IRFI9610GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin TO-220FP IRFI9610GPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin TO-220FP IRFI9610GPBF

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Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin TO-220FP IRFI9610GPBF
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