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Infineon N-Channel MOSFET, 10 A, 80 V, 8-Pin SOIC IRF7854TRPBF

About The 5mm.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4

Infineon N-Channel MOSFET, 10 A, 80 V, 8-Pin SOIC IRF7854TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.9V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 2.5 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 1.5mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 10 A, 80 V, 8-Pin SOIC IRF7854TRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 10 A, 80 V, 8-Pin SOIC IRF7854TRPBF

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Infineon N-Channel MOSFET, 10 A, 80 V, 8-Pin SOIC IRF7854TRPBF
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