onsemi Dual P-Channel MOSFET, 2.6 A, 20 V, 6-Pin MicroFET Thin FDME1023PZT, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 530 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.5mm, Length: 1.6mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi Dual P-Channel MOSFET, 2.6 A, 20 V, 6-Pin MicroFET Thin FDME1023PZT
Specifications of Onsemi Dual P-Channel MOSFET, 2.6 A, 20 V, 6-Pin MicroFET Thin FDME1023PZT | |
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