Infineon Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK IPD80R2K8CEATMA1, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Series: CoolMOS
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK IPD80R2K8CEATMA1
Specifications of Infineon Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK IPD80R2K8CEATMA1 | |
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