Onsemi N-Channel MOSFET, 235 A, 75 V, 3-Pin TO-220 FDP032N08
About The 5V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 15.7mm, Length: 9
onsemi N-Channel MOSFET, 235 A, 75 V, 3-Pin TO-220 FDP032N08, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 15.7mm, Length: 9.9mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 235 A, 75 V, 3-Pin TO-220 FDP032N08
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 235 A, 75 V, 3-Pin TO-220 FDP032N08 | |
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