Nexperia P-Channel MOSFET, 130 MA, 50 V, 3-Pin SOT-23 BSS84,215
About The 8V, Maximum Power Dissipation: 250 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm.Nexperia P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84,215, Package Type: SOT-23 (TO-236AB), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0
Nexperia P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84,215, Package Type: SOT-23 (TO-236AB), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 250 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Nexperia P-Channel MOSFET, 130 MA, 50 V, 3-Pin SOT-23 BSS84,215
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Nexperia P-Channel MOSFET, 130 MA, 50 V, 3-Pin SOT-23 BSS84,215 | |
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