IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C
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IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3
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