STMicroelectronics N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2

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5 x 3.2 x 2mm, Maximum DC Resistance: 400mΩ, Maximum Self Resonant Frequency: 38MHz, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -40°C, MPN: 82103C.

STMicroelectronics N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 10.

2 x 2mm, Maximum DC Resistance: 400mΩ, Maximum Self Resonant Frequency: 38MHz, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -40°C, MPN: 82103C.5 x 3.Murata Power Solutions Murata, 8200 Wire-wound SMD Inductor 10 μH ±10% Wire-Wound 500mA Idc Q:35, Length: 2.

STMicroelectronics N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 10.4mm, Maximum Operating Temperature: +150 °C.