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Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP

About The Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.36 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: 600V CoolMOS™ P7, MPN: IPA60R360P7SXKSA1

Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.36 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: 600V CoolMOS™ P7, MPN: IPA60R360P7SXKSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP

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Instockinstock

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Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 FP
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