IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2
About The 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.25mm, Maximum Operating Temperature: +175 °C
IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 25.25mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of IXYS N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2 | |
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