Infineon P-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-23 BSS314PEH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2.9mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon P-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-23 BSS314PEH6327XTSA1
Specifications of Infineon P-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-23 BSS314PEH6327XTSA1 | |
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