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STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

About The 024 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V.STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.024 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

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STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4
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