Toshiba N-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TK8S06K3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Number of Elements per Chip: 1, Automotive Standard: AEC-Q101
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Toshiba N-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TK8S06K3L
Specifications of Toshiba N-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TK8S06K3L | |
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