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Infineon N-Channel MOSFET, 190 MA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

About The Infineon N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.8V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2

Infineon N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.8V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2.9mm, Maximum Operating Temperature: +150 °C

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Infineon N-Channel MOSFET, 190 MA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 190 MA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

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Infineon N-Channel MOSFET, 190 MA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1
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    • Infineon N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

    Infineon N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

    Infineon N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.

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    • Infineon N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

    Infineon N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

    9mm, Maximum Operating Temperature: +150 °C.8V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2.8V, Minimum Gate Threshold Voltage: 0.

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