onsemi N-Channel MOSFET, 3.2 A, 100 V, 3-Pin SOT-223 FDT86106LZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 189 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3.7mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 3.2 A, 100 V, 3-Pin SOT-223 FDT86106LZ
Specifications of Onsemi N-Channel MOSFET, 3.2 A, 100 V, 3-Pin SOT-223 FDT86106LZ | |
---|---|
Category | |
Instock | instock |
Last Updated