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Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF

About The 6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.Vishay P-Channel MOSFET, 1

Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF

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Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9024PBF
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