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Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FP IPAN60R650CEXKSA1

About The Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FP IPAN60R650CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 650 mO, Maximum Gate Threshold Voltage: 3

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FP IPAN60R650CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 650 mO, Maximum Gate Threshold Voltage: 3.5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FP IPAN60R650CEXKSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FP IPAN60R650CEXKSA1

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Infineon N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FP IPAN60R650CEXKSA1
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