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Infineon Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZSTRL

About The Infineon Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZSTRL, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

Infineon Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZSTRL, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZSTRL

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZSTRL

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Infineon Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZSTRL
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