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Nexperia P-Channel MOSFET, 225 MA, 250 V, 3-Pin SOT-223 BSP225,115

About The 8V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6

Nexperia P-Channel MOSFET, 225 mA, 250 V, 3-Pin SOT-223 BSP225,115, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 15 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.8V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.7mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Nexperia P-Channel MOSFET, 225 MA, 250 V, 3-Pin SOT-223 BSP225,115

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Nexperia P-Channel MOSFET, 225 MA, 250 V, 3-Pin SOT-223 BSP225,115

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Nexperia P-Channel MOSFET, 225 MA, 250 V, 3-Pin SOT-223 BSP225,115
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    Nexperia P-Channel MOSFET, 225 mA, 250 V, 3-Pin SOT-223 BSP225,115, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 15 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.8V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 1.

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