STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.4mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2
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