Onsemi Dual N-Channel MOSFET, 1.2 A, 20 V, 6-Pin SOT-363 FDG1024NZ
About The 4V, Maximum Power Dissipation: 300 mW, 360 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Length: 2mm, Maximum Operating Temperature: +150 °C.2 A, 20 V, 6-Pin SOT-363 FDG1024NZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 259 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0
onsemi Dual N-Channel MOSFET, 1.2 A, 20 V, 6-Pin SOT-363 FDG1024NZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 259 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 300 mW, 360 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Length: 2mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi Dual N-Channel MOSFET, 1.2 A, 20 V, 6-Pin SOT-363 FDG1024NZ
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi Dual N-Channel MOSFET, 1.2 A, 20 V, 6-Pin SOT-363 FDG1024NZ | |
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