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DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7

About The 5V, Maximum Power Dissipation: 2.DiodesZetex N-Channel MOSFET, 9

DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 2.03 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V

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DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7

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DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7
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    • DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7

    DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7

    4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.DiodesZetex N-Channel MOSFET, 9.

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    • DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7

    DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7

    DiodesZetex N-Channel MOSFET, 9.4 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2022UFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.

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