onsemi N-Channel MOSFET, 74 A, 80 V, 5-Pin DFN NTMFS6H836NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 89 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 74 A, 80 V, 5-Pin DFN NTMFS6H836NT1G
Specifications of Onsemi N-Channel MOSFET, 74 A, 80 V, 5-Pin DFN NTMFS6H836NT1G | |
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