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STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N

About The STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 10.4mm, Maximum Operating Temperature: +150 °C

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 10.4mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N

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STMicroelectronics N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220 STP13NM60N
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