Infineon CoolMOS IPW60R090CFD7XKSA1 N-Kanal Dual, THT MOSFET Transistor & Diode 650 V / 97 A, 3-Pin TO-247, Drain-Source-Widerstand max.: 0,09 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4.5V
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Infineon CoolMOS IPW60R090CFD7XKSA1 N-Kanal Dual, THT MOSFET Transistor & Diode 650 V / 97 A, 3-Pin TO-247
Specifications of Infineon CoolMOS IPW60R090CFD7XKSA1 N-Kanal Dual, THT MOSFET Transistor & Diode 650 V / 97 A, 3-Pin TO-247 | |
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Instock | instock |