Infineon CoolMOS P6 IPW60R099P6XKSA1 N-Kanal Dual, THT MOSFET Transistor & Diode 650 V / 109 A, 3-Pin TO-247, Drain-Source-Widerstand max.: 0,099 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4..5V
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
Infineon CoolMOS P6 IPW60R099P6XKSA1 N-Kanal Dual, THT MOSFET Transistor & Diode 650 V / 109 A, 3-Pin TO-247
Specifications of Infineon CoolMOS P6 IPW60R099P6XKSA1 N-Kanal Dual, THT MOSFET Transistor & Diode 650 V / 109 A, 3-Pin TO-247 | |
---|---|
Category | |
Instock | instock |